Method of making low resistance contacts in semiconductor device

Details Method of making low resistance contacts in semiconductor device Method of making low resistance contacts in semiconductor device

1980-09-15

1982-07-20

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

148 15, 148187, 357 65, 357 67, 357 91, 427 84, 427 87, H01L 2972, H01L 21285, H01L 21265

Patent

active

043398693

ABSTRACT:
A low resistance electrical contact is made to a silicon substrate by forming a layer of a refractory metal on the substrate and thereafter applying a dosage of ions through the layer of refractory metal to the substrate to form a layer of a compound of the refractory metal and silicon at the interface of the layer of refractory metal and the silicon substrate.

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B. Y. Tsauer, Z.L. Liau and J. W. Mayer, Ion-beam-induced Silicide Formation, Appl. Phys. Letter 15, Jan. 1979, pp. 168-170.
Nishi et al. in Ion-Implantation in Semiconductors Ed. S. Namba, Plenum, N.Y. 1974, pp. 347-354.
Ottavianai et al., Phys. Rev. Letts. 44 ( Jan. 1980), 284.
Berenbaum et al., IBM-TDB, 22 (Jan. 1980), 3206.
Hodgen, IBM-TDB, 23 (Jun. 1980), 373.

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