Minimizing metal corrosion during post metal solvent clean

Details Minimizing metal corrosion during post metal solvent clean Minimizing metal corrosion during post metal solvent clean

1999-06-15

2001-08-14

Kunemund, Robert (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S749000, C438S750000, C134S001200, C134S001300

Reexamination Certificate

active

06274504

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates the cleaning of etched residue from semiconductor devices. More particularly, the invention relates to the wet cleaning of etched residue from semiconductor devices.
BACKGROUND OF THE INVENTION
In the manufacture of semiconductor devices, photoresist is applied to a surface to create an etch barrier. Parts not covered by the photoresist are etched away. The photoresist is then stripped away. Remaining photoresist and the etching residue is then cleaned, often through a wet cleaning process. If the solvent used in the wet cleaning process is too aggressive, the solvent may attack or corrode metal layers of the semiconductor devices. If the solvent used in the wet cleaning process is not aggressive enough, it may provide a slow throughput or insufficient residue removal. As device size decreases, solvent attack or corrosion of metal layers and residue are more likely to damage a semiconductor device.
It would be advantageous to provide a wet cleaning processes that reduces solvent attack and corrosion of metal layers, which does not reduce residue removal and device throughput.
BRIEF SUMMARY OF THE INVENTION
It is an object of the invention to provide a wet cleaning process that reduces solvent attack and corrosion of metal layers, without reducing residue removal and device throughput.
Accordingly, the foregoing object is accomplished providing a solvent spray at an elevated temperature, then providing a spray of the same solvent at a lower temperature close to room temperature, and then providing a water rinse.
Other features of the present invention are disclosed or apparent in the section entitled: “DETAILED DESCRIPTION OF THE INVENTION.”


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Advanced Chemical Technologies New Product Bulletin entitled Sidewall Polymer Positive Phtoresist Remover.
CRC Handbook of Chemistry and Physics 80thEdition (p. 3-305).
Microchip Fabrication—Third Edition, Peter Van Zant (pp. 276 and 283).
Silicon Processing for the VLSI Era vol. 1 Process Technology 2ndEdition, Stanley Wolf Ph.D. & Richard N. Tauber Ph.D. (pp. 131 and 133).

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