Solar cells and photodetectors

Details Solar cells and photodetectors Solar cells and photodetectors

1984-04-27

1985-10-15

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136255, 136258, 136259, 136262, 357 16, 357 30, H01L 3106

Patent

active

045476225

ABSTRACT:
An improved photovoltaic device in which a charge separation junction is provided over a charge confining heterojunction. The charge separation junction is a junction formed of an n.sup.+ -doped direct bandgap layer on a p-doped direct bandgap active layer. The charge confining heterojunction is formed by the interface of the active layer with a Back Surface Layer (BSL) of higher bandgap material than the active layer to provide a Back Surface Field (BSF). The percentage of Al in the layers may vary from Y=O to x.ltoreq.0.42. The structure applies to both crystalline and amorphous material.

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Hovel et al., 12th IEEE Photovoltaic Specialists Conf., 1976 Institute of Electrical Electronic Engineers, NY, pp. 945-947.
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"A High-Efficiency GaAlAs Double-Heterostructure Photovoltaic Detector," Appl. Phys. Lett. 33(8), Oct. 15, 1978, Miller et al., pp. 721-723.
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"Concentration Dependence of the Absorption Coefficient for n- and p-type GaAs Between 1.3 and 1.6 eV, Journal of Applied Physics, vol. 46, No. 1, Jan. 1975, Casey et al., pp. 250-257.

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