Planar P-I-N photodetectors

Details Planar P-I-N photodetectors Planar P-I-N photodetectors

1979-12-26

1981-08-04

Edlow, Martin H.

357 16, 357 56, 357 58, H01L 2714

Patent

active

042825415

ABSTRACT:
A light transducer (10) is described in which a semi-insulating, single crystal body (12) of light-absorbing semiconductor material has a pair of spaced-apart epitaxial zones (14, 16) of opposite conductivity type integrally and electrically coupled to a surface (18) of the body. The zones, which may be mesas epitaxially grown on the surface or regions diffused or ion-implanted in the surface, are positioned so that radiation (20) absorbed between them generates photocarriers which are able to diffuse and/or drift to the zones. Also described is an array of transducers in which the photovoltages developed across a plurality of pairs of zones are added in series.

REFERENCES:
patent: 3549960 (1970-12-01), Wedlock
patent: 3959794 (1976-05-01), Chrepta et al.
patent: 4107721 (1978-08-01), Miller
patent: 4107723 (1978-08-01), Komath
patent: 4127862 (1980-11-01), Ilegems
patent: 4156310 (1979-05-01), Komath
Sharma, Semiconductor Heterojunctions, Pergamon Press, 1974, pp. 133-137.

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