Quantum-effect semiconductor devices

Details Quantum-effect semiconductor devices Quantum-effect semiconductor devices

1989-09-07

1992-05-12

Jackson, Jr., Jerome

357 4, 357 22, 357 34, H01L 29205

Patent

active

051132311

ABSTRACT:
A novel combination of semiconductor heterojunctions provide a quantum-effect device with resonant or enhanced transmission of electrons (or holes) due to tunneling into a quantum well state in the valence (or conduction) band. A particular heterostructure comprising sequentially grown layers of indium arsenide, aluminum antimonide, gallium antimonide, aluminum antimonide and indium arsenide, permits electrons tunneling from the indium arsenide conduction band through the aluminum antimonide barrier into a sub-band level in the valence band quantum well of the gallium antimonide. This particular embodiment produced a current-voltage characteristic with negative differential resistance and a peak-to-valley current ratio of about 20 at room temperature and 88 at liquid nitrogen temperature. The present invention can be used either as a two-contact device such as a diode or a three-contact device such as a transistor.

REFERENCES:
patent: 4137542 (1979-01-01), Chang et al.
patent: 4326208 (1982-04-01), Fang et al.
patent: 4538165 (1985-08-01), Chang et al.
patent: 4849799 (1989-07-01), Capasso et al.
Chang et al., IBM TDB, vol. 22 No. 7 Dec. 79 "GaSb-InAs-GaSb pnp . . . Speeds".
IBM TDB, vol. 31 No. 7 Dec. 1988 "Negative Resistance Device".

Affiliated with

Also associated with

Rating

Quantum-effect semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Quantum-effect semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Quantum-effect semiconductor devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427106