Method of manufacturing field effect transistors

Details Method of manufacturing field effect transistors Method of manufacturing field effect transistors

1991-07-16

1992-05-12

Thomas, Tom

Fishing, trapping, and vermin destroying

437 39, 437 40, 437 44, 437176, 437178, 437196, 437912, H01L 2118

Patent

active

051127660

ABSTRACT:
A method of producing a field effect transistor includes forming a first conductivity type active layer having a first concentration of dopant impurities producing the first conductivity type in a semi-insulating semiconductor substrate, forming a mask film on the substrate on part of the first conductivity type region, depositing a gate metal film on the mask film and on the substrate not covered by the mask film, etching the gate metal film and leaving a portion of the gate metal film on the substrate adjacent to and contacting the mask film as a gate electrode, implanting dopant impurities producing a second conductivity type in the substrate using the mask film and the gate electrode as an implantation mask, annealing the substrate at an elevated temperature to activate the implanted dopant impurities whereby some of the implanted dopant impurities diffuse laterally within the substrate to produce a second conductivity type region in the substrate underneath part of the gate electrode, removing the mask film, implanting dopant impurities producing the first conductivity type in the substrate using the gate electrode as an ion implantation mask to produce first and second doped regions in the substrate on opposite sides of the gate electrode and having a second concentration of dopant impurities larger than the first concentration, the second doped region being disposed within the second conductivity type region that extends underneath part of the gate electrode, and forming a source electrode on the first doped region and a drain electrode on the second doped region.

REFERENCES:
patent: 4312680 (1982-01-01), Hsu
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4559693 (1985-12-01), Kamei
patent: 4597827 (1986-07-01), Nishitani et al.
patent: 4729966 (1988-03-01), Koshino et al.
patent: 4769339 (1988-09-01), Ishii
patent: 5001077 (1991-03-01), Sakai

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