Method for the fabrication of low leakage polysilicon thin film

Details Method for the fabrication of low leakage polysilicon thin film Method for the fabrication of low leakage polysilicon thin film

1990-09-04

1992-05-12

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437 44, 437 46, 437909, 148DIG150, H01L 21265

Patent

active

051127644

ABSTRACT:
A method of manufacturing a thin film transistor having a low leakage current including depositing a layer of silicon oxide on a semiconductor substrate or on a layer of silicon nitrate deposited on a glass substrate, depositing a polysilicon layer, at a temperature of 520.degree.-570.degree. C., on the silicon oxide layer, annealing this polysilicon layer in a nitrogen atmosphere at a temperature of less than 650.degree. C., forming islands in this polysilicon layer, forming a gate oxide layer on one of the islands by oxidizing the island under high pressure at a temperature below 650.degree. C., forming a gate from a heavily doped polysilicon layer deposited on the gate oxide layer, forming lightly doped source and drain areas laterally adjacent to the gate, providing a thin layer of silicon oxide on the gate and the source and drain access, heavily doping areas of the first silicon layer adjacent to the source and drain areas, annealing the source and drain areas at a temperature below 650.degree. C. and hydrogenating the resistive transistor with a hydrogen plasma.

REFERENCES:
patent: 4597160 (1986-07-01), Ipri
patent: 4675978 (1987-06-01), Swartz
patent: 4727044 (1988-02-01), Yamazaki
patent: 4945067 (1990-07-01), Huang
patent: 5006479 (1991-04-01), Brandewie
patent: 5024965 (1991-06-01), Chang et al.
Nakazawa et al., "Lightly doped drain TFT structure for poly-si LCDs", Proc. of SID 1990, pp. 311-314.
Su, "Low-temperature silicon processing techniques for VLSIC fabrication", Solid State Tech., Mar. 1981, pp. 72-82.
Troxell et al., "Polycrystalline Silicon Thin-Film Transistors on a Novel 800.degree. C. Glass Substrate", IEEE Elec. Dev. Lett., vol. EDL-7, No. 11, Nov. 1986, pp. 597-599.

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