Patent
1982-07-16
1987-11-24
Carroll, J.
357231, 357 24, 357 30, 357 65, 357 56, 357 61, H01L 2714, H01L 29161, H01L 2978
Patent
active
047092521
ABSTRACT:
An infrared photo-responsive element (R.sub.D) is monolithically integrated into a source follower circuit of a metal oxide semiconductor device (10) by depositing a layer of a lead chalcogenide as a photo-resistive element forming an ohmic bridge between two metallization strips (26, 28) serving as electrodes of the circuit. Voltage from the circuit varies in response to illumination of the layer by infrared radiation.
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Dargo David R.
Jhabvala Murzban D.
Lyons John C.
Bushnell Robert E.
Carroll J.
Manning John R.
The United States of America as represented by the Administrator
Tresansky John O.
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