Semiconductor device having a passivated surface and method of m

Details Semiconductor device having a passivated surface and method of m Semiconductor device having a passivated surface and method of m

1976-12-08

1978-04-25

Wojciechowicz, Edward J.

357 49, 357 50, 357 55, 357 59, H01L 2934, H01L 2712, H01L 2906, H01L 2904

Patent

active

040866130

ABSTRACT:
A semiconductor device in which at least a part of the active surface is covered by a passivating combined layer. According to the invention the passivating combined layer comprises two layers of the same semiconductor material lying one on top of the other, the lowermost layer having a resistivity of at least 10.sup.10 ohm.cm, and the layer present thereon having a resistivity of at most 10.sup.8 ohm.cm.

REFERENCES:
patent: 3971061 (1976-07-01), Matsushita et al.
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4009484 (1977-02-01), Ogiue et al.

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