Capacitor for semiconductor integrated circuit and method of man

Details Capacitor for semiconductor integrated circuit and method of man Capacitor for semiconductor integrated circuit and method of man

1992-12-23

1995-07-18

Reynolds, Bruce A.

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361305, 361322, H01G 706, H01G 4008, H01G 412

Patent

active

054347424

ABSTRACT:
A semiconductor integrated circuit apparatus according to the present invention has a capacitor formed in such a manner that a ferroelectric thin film is formed after a MOS transistor has been formed on a substrate thereof, a ferroelectric thin film made of, for example, PbZrTiO.sub.3 or SrTiO.sub.3 or the like is formed into a columnar shape to form electrodes positioned in direct contact with the side wall portions of said columnar ferroelectric thin film, and the top portion is removed. As a result, a fact that an oxide of each electrode, which deteriorates the relative permittivity, is formed on the interface between the electrode and the ferroelectric material is prevented, and a large capacity can be realized with respect to the area of the substrate because the ferroelectric thin film is formed into the columnar and elongated shape, resulting in that the capacitance of the capacitor is not reduced in which the electrodes and the oxide dielectric material having a high permittivity are, in series, connected to each other.
The capacitor is formed into a DRAM or an FRAM memory cell so as to realize a semiconductor memory revealing a high degree of integration and a high processing speed.

REFERENCES:
patent: 4458295 (1984-07-01), Durschlag
patent: 4707897 (1987-11-01), Rohrer
patent: 4964016 (1990-10-01), Marchand
patent: 5155573 (1992-10-01), Abe
patent: 5248564 (1993-09-01), Ramesh
patent: 5307304 (1994-04-01), Saito et al.
Japanese Journal of Applied Physics, Part 1 Regular Papers and Short Notes, Sep. 1991, vol. 30, No. 9B.

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