Potential sensor employing electrooptic crystal and potential me

Details Potential sensor employing electrooptic crystal and potential me Potential sensor employing electrooptic crystal and potential me

1993-07-20

1995-07-18

Lerner, Martin

Optical: systems and elements

Optical modulator

Light wave temporal modulation

257451, 324 96, 356364, 359248, 359252, 359255, E02F 1015, E01R 3100

Patent

active

054346983

ABSTRACT:
A high-resistance compound semiconductor 12 is epitaxially grown on a low-resistance compound semiconductor 11 and a dielectric reflecting film 13 is formed thereon, thereby forming a monolithic sensor 10. As the low-resistance compound semiconductor 11, a compound semiconductor is used which has a large bandgap so as to enable probe light to pass therethrough without being absorbed and which has a lattice constant and a thermal expansion coefficient, which are close to those of the high-resistance compound semiconductor. In addition, since the low-resistance compound semiconductor 11 also serves as an electrode, a compound semiconductor which has a resistivity of 10.sup.+1 .OMEGA.cm or less is used. Since the shorter the wavelength of the probe light used, the larger the retardation change and the larger the signal output, a compound semiconductor which has a large bandgap is used as the high-resistance compound semiconductor 12 so that light of short wavelength can be used. The high-resistance compound semiconductor 12 is also required to have a large electrooptic constant and a resistivity of 10.sup.5 .OMEGA.cm or more.

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Ben G. Streetman, Solid State Electronic Devices, second edition, Prentice-Hall, Englewood Cliffs, N.J., 1980, p. 443.

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