Phased-locked array of semiconductor lasers using closely spaced

Details Phased-locked array of semiconductor lasers using closely spaced Phased-locked array of semiconductor lasers using closely spaced

1988-04-12

1989-08-22

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 46, 372 48, 372 50, H01S 319

Patent

active

048602981

ABSTRACT:
A semiconductor laser diode array in which the lasing elements are formed as parallel negative-index waveguides, to provide operation at higher powers and in one of two stable array modes. Lasing in interelement regions, between the lasing elements, is suppressed by the inherently low transverse optical confinement factor provided by high-index semiconductor material in the interelement regions, and may be further suppressed by the use of an active layer that extends only through the lasing elements and not through the interelement regions. A desired array mode may be selected by the use of a structure favoring 0.degree.-phase-shift array modes, such as a wide-waveguide interferometric structure. Both liquid-phase epitaxy (LPE) and metalorganic chemical vapor deposition (MOCVD) processes may be used in fabrication of the device.

REFERENCES:
patent: 4215319 (1980-07-01), Botez
patent: 4547396 (1985-10-01), Botez et al.
patent: 4692925 (1987-09-01), Botez
patent: 4723252 (1988-02-01), Botez et al.
D. Botez & D. E. Ackley, "Phase-Locked Arrays of Semiconductor Diode Lasers", IEEE Cir. & Dev., vol. 2, No. 1, pp. 8-17 (1986).
D. Botez, "Single-Mode Lasers for Optical Communications", IEE Proc., vol. 129, Pt. 1, No. 6, pp. 237-251, (Dec. 1982).

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