Submicron bipolar transistor with buried silicide region

Details Submicron bipolar transistor with buried silicide region Submicron bipolar transistor with buried silicide region

1988-08-24

1989-08-22

Hille, Rolf

357 34, 357 67, 357 54, H01L 2904, H01L 2972, H01L 2348, H01L 2934

Patent

active

048600857

ABSTRACT:
A high performance bipolar transistor structure is disclosed which exhibits an extremely low extrinsic base resistance by virtue of a silicide layer which is included in the base contact portion of the structure. The silicide layer is situated to be electrically in parallel with the conventional heavily-doped polysilicon base contact region, where a vertical polysilicon runner is used to provide a self-aligned electrical contact to the base. The parallel combination of the low resistivity (0.5-4 ohm/square) silicide with the polysilicon (sheet resistance of 10-100 ohm/square) results in a low extrinsic base resistance on the order of 0.5-4 ohm/square. The disclosed device also includes a submicron emitter size, defined by vertical oxide sidewalls above the base region, which further improves the high frequency performance of the device.

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