Semiconductor integrated circuit structure with insulative parti

Details Semiconductor integrated circuit structure with insulative parti Semiconductor integrated circuit structure with insulative parti

1985-09-19

1989-08-22

Hille, Rolf

357 59, 357 54, 357 60, H01L 2712

Patent

active

048600814

ABSTRACT:
Grooves are formed in a single crystal silicon wafer in a pattern to encircle surface areas. Silicon dioxide is placed in the grooves and on the surface and then removed from certain of the areas. Layers of silicon are epitaxially grown only on these areas and their surfaces are oxidized. Polycrystalline silicon is deposited to a thickness greater than that of the epitaxial layers. Both sides of the wafer are ground and polished to produce flat, planar, opposite surfaces; one surface exposing surface areas of the epitaxial layers, the other surface exposing the silicon dioxide in the grooves. The resulting substrate has two types of silicon sections, each of which is electrically isolated from the other by silicon dioxide partitions. One type of section is of silicon of the original wafer, has a surface area in only one surface, and is suitable for the fabrication of low voltage, low power devices therein. The other type of section has two zones, one of silicon of the original wafer at one surface and the other of epitaxial silicon at the other surface. This type of section is suitable for the fabrication of high voltage, high power devices therein.

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