Method of making a MOS-type semiconductor device

Details Method of making a MOS-type semiconductor device Method of making a MOS-type semiconductor device

1976-12-27

1978-04-25

Dost, Gerald A.

Metal working

Method of mechanical manufacture

Assembling or joining

B01J 1700

Patent

active

040854990

ABSTRACT:
A method of making an MOS-type semiconductor device wherein the surface thereon for the conductors is flat. For this purpose, a polycrystalline silicon layer is provided and a part of the layer is selectively oxidized, so that the remaining portion of the layer acts as a lead for connecting a functional region such as a source region, a drain region etc. with the conductor layer. When said oxidization is performed, the diffusion from the polycrystalline silicon layer into the substrate occurs due to heating, so that said functional regions are formed at the same time.

REFERENCES:
patent: 3942241 (1976-03-01), Harigaya et al.

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