Semiconductor memory device and manufacturing method thereof

Details Semiconductor memory device and manufacturing method thereof Semiconductor memory device and manufacturing method thereof

1993-01-12

1994-05-10

Fears, Terrell W.

Static information storage and retrieval

Format or disposition of elements

365182, 36518901, G11C 1300

Patent

active

053114639

ABSTRACT:
A semiconductor memory device has a diffusive region for a source formed in the shape of a band on a substrate; a diffusive region for a drain formed in the shape of a band in parallel with the diffusive region for a source and alternated with this diffusive region for a source; a first word line layer formed such that the first word line layer crosses the diffusive regions for a source and a drain; and a second word line layer formed in parallel with the first word line layer. The semiconductor memory device further has a channel region including an a-region on a substrate surface located on the lower side of a flat portion within a region prescribed between the diffusive regions for a source and a drain; and two b-regions on the substrate surface arranged on both sides of the a-region and located on the lower sides of first and second side wall portions.

REFERENCES:
patent: 4694428 (1987-09-01), Matsomura et al.

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