Patent
1987-02-17
1989-01-17
James, Andrew J.
357 53, 357 91, H01L 2912, H01L 2940
Patent
active
047991003
ABSTRACT:
In order to increase breakdown voltage of a planar junction of a semiconductor device, an oxide layer is provided on a portion of the surface of the semiconductor substrate and covers the junction at that surface, the oxide layer containing a charged ion region extending from the junction over a portion of the substrate, with the polarity of the ions being the same as the polarity of the substrate region over which the oxide layer extends.
REFERENCES:
patent: 4090213 (1978-05-01), Maserjian et al.
patent: 4481527 (1984-11-01), Chen et al.
patent: 4544416 (1985-10-01), Meador et al.
patent: 4551353 (1985-11-01), Hower et al.
"Physics of Semiconductor Devices", 2nd Edition, by S. M. Sze, (1981), pp. 73, 106-108.
"Surface Breakdown in Silicon Planar Diodes Equipped with Field Plate", by Conti & Conti, published in Solid-State Electronics, 1982, vol. 15, pp. 93-105.
"Locking Capability of Planar Devices with Field Limiting Rings", by Brieger, Gerlach, and Pelka, published in Solid-State Electronics, vol. 26, No. 8, pp. 739-745 (1983).
Blanchard Richard A.
Cogan Adrian I.
Jackson Jerome
James Andrew J.
Klivans Norman R.
MacPherson Alan H.
Siliconix incorporated
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