Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1992-12-29
1994-05-10
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, 257 20, 257 29, H01L 31072, H01L 31109, H01L 2906
Patent
active
053110455
ABSTRACT:
The present invention is a method for making field effect devices, such as a field effect transistors, having ultrashort gate lengths so low as five hundred angstroms or less. In accordance with the invention the gate structure is grown vertically on a substrate by thin film deposition so that the length dimension of the gate is perpendicular to a major surface of the substrate. An edge of the gate-containing substrate is exposed, and the structure comprising the source, drain and channel is grown on the edge. Using this approach, field effect devices with precisely controlled gate lengths of less than 100 angstroms are achievable. Moreover the active regions of the device can be immersed within semiconductor material so that surface properties do not deteriorate device performance.
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Baldwin Kirk W.
Pfeiffer Loren N.
Stormer Horst L.
West Kenneth W.
AT&T Bell Laboratories
Books Glen E.
Fahmy Wael
Hille Rolf
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