Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1995-04-05

1997-07-08

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

056469535

ABSTRACT:
On an n-type semiconductor substrate, a buffer layer and a cladding layer are formed. On the cladding layer, an active layer made of Ga.sub.1-X Al.sub.X As is formed. On the active layer, an n-type first optical guiding layer made of Ga.sub.1-Y1 Al.sub.Y1 As is formed, and on the first optical guiding layer, an n-type second optical guiding layer made of Ga.sub.1-Y2 Al.sub.Y2 As is formed in stripe. On the first optical guiding layer and the second optical guiding layer, an n-type cladding layer made of Ga.sub.1-Y3 Al.sub.Y3 As is formed. The interface resistance between the first optical guiding layer and the cladding layer is larger than both the interface resistance between the first optical guiding layer and the second optical guiding layer and the interface resistance between the second optical guiding layer and the cladding layer. Between X, Y1, Y2, and Y3 of each AlAs mole fraction of the active layer, first and second optical guiding layers, and cladding layer, the relationships of Y3>Y2 and Y1>X.gtoreq.0 are satisfied.

REFERENCES:
patent: 5321712 (1994-06-01), Itaya et al.
patent: 5331656 (1994-07-01), Tanaka
patent: 5386429 (1995-01-01), Naito et al.
patent: 5466950 (1995-11-01), Sugawasa et al.
patent: 5574743 (1996-11-01), van der Poel et al.

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