Flash memory having segmented array for improved operation

Static information storage and retrieval – Floating gate – Particular connection

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36518505, G11C 1140

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active

056468865

ABSTRACT:
The drain bit line capacitance of a segmented alternate-metal virtual-ground (AMG) flash memory array is reduced by connecting the virtual or noncontinuous bit lines of the array to a drain voltage via select transistors that are not connected to the continuous bit lines that extend through each of the segments of the array.

REFERENCES:
patent: 5023681 (1991-06-01), Ha
patent: 5241497 (1993-08-01), Komarek
patent: 5295105 (1994-03-01), Atsumi
patent: 5313432 (1994-05-01), Lin et al.
patent: 5319593 (1994-06-01), Wolstenholme
patent: 5327378 (1994-07-01), Kazerounian
patent: 5331592 (1994-07-01), Yamagata
patent: 5379254 (1995-01-01), Chang
patent: 5406521 (1995-04-01), Hara
Document No. Appl. No. 08/307,340, Filing Date Sep. 16, 1994, Name Brahmbatt, Dhaval.

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