Ion implantation system

Details Ion implantation system Ion implantation system

1979-07-30

1981-03-24

Anderson, Bruce C.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250442, H01J 3700, B01D 5944

Patent

active

042582660

ABSTRACT:
The ion implantation system includes a separate vacuum housing 102 for the ion source and the target chamber 118. The ribbon beam ion source 10 provides a footprint 162 on the wafer wheel 126 of such shape as to permit short traverse of the wafer wheel 126 for full wafer scan.

REFERENCES:
patent: 3689766 (1972-09-01), Freeman
patent: 3778626 (1973-12-01), Robertson
patent: 3983402 (1976-09-01), Arndt et al.
patent: 4017403 (1977-04-01), Freeman
patent: 4163151 (1979-07-01), Bayless et al.

Affiliated with

Also associated with

Rating

Ion implantation system does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Ion implantation system, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Ion implantation system will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2409715