1981-01-23
1983-02-01
Edlow, Martin H.
357 6, 357 16, 357 61, H01L 2988
Patent
active
043718841
ABSTRACT:
Disclosed is a tunnel diode consisting of an accumulation region of p-type GaSb and an accumulation region of n-type InAs separated by a thin layer of a quaternary compound consisting of InGaSbAs. Such a diode structure converts the interface between the two accumulation regions of p-type and n-type material from what would normally be an ohmic junction into a tunneling junction. Such a tunnel diode requires no heavy doping which is normally required for a tunnel diode.
REFERENCES:
patent: 4173763 (1979-11-01), Chang et al.
patent: 4198644 (1980-04-01), Esaki et al.
C. A. Chang, et al., Applied Physics Letters, vol. 31, No. 11, Dec. 1977, . 759-761.
L. L Chang, et al., J. Vac. Sci. Technol., vol. 10, No. 5, Sep./Oct. 1973, p. 655.
Chang Chin-An
Esaki Leo
Badgett J. L.
Edelberg Nathan
Edlow Martin H.
Kanars Sheldon
Murray Jeremiah G.
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