Effective channel length simulation using a single sample transi

Details Effective channel length simulation using a single sample transi Effective channel length simulation using a single sample transi

1995-05-22

1996-01-02

Ramirez, Ellis B.

Boots, shoes, and leggings

437 40, 257213, G06F 1700

Patent

active

054814855

ABSTRACT:
In a device simulation apparatus, the structural parameters of a single sample field effect transistor are retrieved from a memory and a set of voltage parameters is established. A source-drain current value and a potential distribution are derived from the structural parameters. A source-drain resistance value is then derived from the source-drain current value and one of the voltage parameters and a channel resistivity value is derived from the potential distribution and the source-drain current value. One of the voltage parameters is successively updated to repeat the process on the updated parameter to produce a said plurality of source-drain current values and a plurality of channel resistivity values. The effective channel length of the transistor is determined from the source-drain resistance values and the channel resistivity values.

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