Zener diode for protection of integrated circuit explosive bridg

Ammunition and explosives – Igniting devices and systems – Accidental fuse ignition prevention means

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1022021, 1022025, F42B 313, F42B 3182

Patent

active

053098412

ABSTRACT:
An integrated circuit bridge comprises a substrate of non-electrically conductive material and a semiconductor layer on the substrate. First and second metal lands form contacts of the semiconductor bridge. An explosive charge bridges a gap between the metal lands. The lands, gap, semiconductor bridge, and charge are dimensioned and arranged so that in response to a current equal to or in excess of a predetermined level having a duration equal to or in excess of a predetermined value being applied across the gap, a plasma having sufficient energy to energize the explosive is formed in the gap. The predetermined current has a predetermined minimum firing voltage associated with it. The bridge is one of a lot having a firing voltage standard deviation of about 0.05 volts. Premature energization of the explosive by electrostatic discharge and voltages greater than the firing voltage and by AC induced voltages is prevented by connecting a zener diode across the first and second lands. The zener diode is chosen to conduct in the backward direction in response to a positive voltage of about 1.1 times the predetermined minimum firing voltage being applied across it. The bridge comprises a tungsten layer that extends across the gap on the semiconductor layer. The lands have a resistivity much smaller than that of the tungsten layer.

REFERENCES:
patent: 2408125 (1946-09-01), Rolfes
patent: 2801585 (1957-08-01), Smith
patent: 2821139 (1958-01-01), Apstein et al.
patent: 2878752 (1959-03-01), Johnson et al.
patent: 3180263 (1965-04-01), Williams, Jr.
patent: 3610153 (1971-10-01), Betts et al.
patent: 3640224 (1972-02-01), Petrick et al.
patent: 4261263 (1981-04-01), Coultas et al.
patent: 4592280 (1986-06-01), Shores
patent: 4708060 (1987-11-01), Bickes, Jr. et al.
patent: 4712477 (1987-12-01), Aikou et al.
patent: 4729325 (1988-03-01), Proffit et al.
patent: 4819560 (1989-04-01), Patz et al.
patent: 4840122 (1989-06-01), Nerheim
patent: 4893563 (1990-01-01), Baginski
patent: 4893564 (1990-01-01), Ochi et al.
patent: 4967665 (1990-11-01), Baginski
patent: 4976200 (1990-12-01), Benson et al.
patent: 5085146 (1992-02-01), Baginski
patent: 5179248 (1993-01-01), Hartman et al.
Jan. 1987, "Semiconductor Bridge (SCB) Development Technology Transfer Symposium," Sandia Report, SAND 86-2211 (bullet) UC-13, R. W. Bickles, Jr., editor, Sandia National Laboratories, Albuquerque, New Mexico and Livermore, Calif.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Zener diode for protection of integrated circuit explosive bridg does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Zener diode for protection of integrated circuit explosive bridg, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Zener diode for protection of integrated circuit explosive bridg will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2408526

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.