Method for polishing a wafer

Etching a substrate: processes – Nongaseous phase etching of substrate – Using film of etchant between a stationary surface and a...

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216 88, 1566361, 252 791, 106 6, C09G 100, B24B 100

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056457367

ABSTRACT:
A method is shown for polishing a workpiece such as a semiconductor wafer. A polishing composition is first formed which includes (1) a polishing media particle; and (2) a film forming binder for suspending the particle and forming a temporary film on an exposed surface of the workpiece, the temporary film being dissolvable in a subsequently applied polishing wash, whereby the polishing media particle is freed to polish the workpiece. The polishing composition is applied to the surface of the semiconductor wafer in a spin coating operation and thereafter cured in a hot plate bake or a furnace operation. In order to polish the workpiece, a polishing wash is applied to either or both of the surface of the workpiece or a polishing pad and thereafter causing the pad to be sufficiently proximate to the surface of the workpiece at a pressure and for a time sufficient to polish and planarize the workpiece.

REFERENCES:
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patent: 4260396 (1981-04-01), Glemza
patent: 4462188 (1984-07-01), Payne
patent: 4544377 (1985-10-01), Schwen
patent: 5043012 (1991-08-01), Shinohara et al.
patent: 5264010 (1993-11-01), Brancaleoni et al.
patent: 5352277 (1994-10-01), Saski
patent: 5470798 (1995-11-01), Ouellet

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