Fabrication of integrated circuit with complementary, dielectric

Details Fabrication of integrated circuit with complementary, dielectric Fabrication of integrated circuit with complementary, dielectric

1984-11-02

1986-06-10

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 29577C, 148 15, 148175, 148187, 357 52, H01L 2176, H01L 21306, H01L 21441

Patent

active

045934584

ABSTRACT:
Fabrication of an integrated circuit containing complementary, dielectrically-isolated, high voltage semiconductor devices of the lateral-current conduction type involves doping of the voltage-supporting regions of the complementary devices in two steps, in accordance with Lateral Charge Control technology. A first conductivity type dopant is introduced into a semiconductor layer as it is being epitaxially grown, with the dopant concentration being below about 20 percent of the desired final doping concentration of the first conductivity type voltage-supporting region. Ion implantation of further first conductivity type dopant achieves final doping of the first conductivity type voltage-supporting region, while a separate ion implantation of a second conductivity dopant achieves final doping of the second conductivity type voltage-supporting region. For high current silicon devices having voltage-supporting regions thicker than about 5 microns, a fast-diffusing P-conductivity dopant, such as aluminum, forms the P-conductivity type voltage-supporting region for enhancing device current conduction capacity, particularly in bipolar devices, such as IGTs or bipolar transistors.

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