1986-05-23
1988-09-27
James, Andrew J.
357 51, 357 54, 357 84, H01L 2348
Patent
active
047745614
ABSTRACT:
A semiconductor device with a circuit including a fuse wiring which comprises a step portion provided on a first insulating film which is provided on a substrate; a fuse wiring provided on the step portion via a second insulating film so that the central portion of the fuse wiring traverses the step portion; the central portion of the fuse wiring being positioned at a higher position than both the side portions thereof by a distance equal to the thickness of the step portion; and a third insulating film having a flat surface provided on the fuse wiring.
REFERENCES:
D. Smart et al, "Laser Targeting Consideration in Redundant Memory Repair" Proceedings of Spie International Society of Optical Engineering (USA) vol. 385 97-101 1983, p. 4.
M. Shiozaki et al, "Radiation Damage due to Laser Fuse Blowing", ESI Technical Article, p. 5 (proc. 1982 Electrochem Society Annual Meeting).
"A High-Speed Hi-CMOS II 4K Static RAM" IEEE Journal of Solid-State Circuits vol. SC-16 No.5, Oct. 1981, p. 5.
James Andrew J.
Key Gregory A.
Mitsubishi Denki & Kabushiki Kaisha
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