Semiconductor devices employing Ti-doped Group III-V epitaxial l

Details Semiconductor devices employing Ti-doped Group III-V epitaxial l Semiconductor devices employing Ti-doped Group III-V epitaxial l

1986-12-16

1988-09-27

Macon, Robert S.

357 16, 357 63, H01L 3300

Patent

active

047745541

ABSTRACT:
High resistivity Ti-doped Group III-V-based MOCVD layers are used to constrain current to flow through the active region of a variety of devices such as CSBH and DCPBH lasers.

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