Amplifiers – With semiconductor amplifying device – Including field effect transistor
Patent
1987-03-18
1988-09-27
Laroche, Eugene R.
Amplifiers
With semiconductor amplifying device
Including field effect transistor
330195, H03F 316
Patent
active
047744774
ABSTRACT:
Intermodulation distortion in RF FET amplifiers operating in the Class AB mode is reduced without limiting the bandwidth by providing transformer coupled outputs from both the source and drain circuits. The negative feedback provided by the transformer in the source circuit reduces distortion but does not limit bandwidth in the manner of the reactive network normally used for correct phasing in circuits employing drain to gate feedback. Using this technique, the distortion components are typically 40-45 dB below the desired signal when a two-tone test is used, which exceeds the typically available level of 30 dB in prior art circuits.
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Krett David L.
Rodes William D.
Hamann H. Fredrick
LaRoche Eugene R.
Mottola Steven J.
Murrah M. Lee
Rockwell International Corporation
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