Semiconductor memory device with flip-flop memory cells which in

Details Semiconductor memory device with flip-flop memory cells which in Semiconductor memory device with flip-flop memory cells which in

1986-01-22

1989-04-18

Munson, Gene M.

357 51, 357 59, H01L 2702, H01L 2904

Patent

active

048231797

ABSTRACT:
A semiconductor memory includes a number of static memory cells formed in a substrate. Each memory cell comprises a flip-flop circuit including a pair of first and second insulated gate field effect transistors formed in the substrate. Each of the transistors has a gate connected to one end of the source-drain path of the other transistor of the transistor pair. A pair of first and second load resistors are connected to the above one ends of the first and second transistors, respectively. Each of the load resistors is constituted of a polycrystalline semiconductor layer formed with the intermediary of an insulative layer on the gate of the transistor whose source-drain path is connected is series to the other load resistor. A pair of transfer gate transistors are formed in the substrate and respectively connected to the above one ends of the first and second transistors for selective drive of the flip-flop circuit.

REFERENCES:
patent: 4234889 (1980-11-01), Raymond et al.
patent: 4240097 (1980-12-01), Raymond
patent: 4322824 (1982-03-01), Allan
patent: 4370798 (1983-02-01), Lien et al.
patent: 4453175 (1984-06-01), Ariizumi et al.
patent: 4558343 (1985-12-01), Ariizumi et al.

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