Bipolar transistor and process of fabrication thereof

Details Bipolar transistor and process of fabrication thereof Bipolar transistor and process of fabrication thereof

1988-06-08

1989-04-18

Wojciechowicz, Edward J.

357 16, 357 36, 357 48, 357 55, 357 56, 357 58, 357 90, H01L 2972

Patent

active

048231746

ABSTRACT:
A bipolar transistor comprising a first layer of a first semiconductor material having a first conductivity type, a second layer on the first layer, the second layer being of a second semiconductor material having a second conductivity type, the second semiconductor material having a bandgap less than that of the first semiconductor material, a third layer on the second layer, the third layer being of the second semiconductor material and having the first conductivity type, a first doped region in the first layer, the first doped region being of the first semiconductor material and being doped to be semi-insulating regions, and a second doped region in the third layer, the second doped region being of the second semiconductor material and being doped to the second conductivity type. The second layer has a portion forming an active base region and the third layer has a portion forming a collector region in contact with the active base region. The first doped region defines in the first layer an active emitter region in contact with the active base region and the second doped region forms a connecting base region electrically coupled with the active base region.

REFERENCES:
patent: 4380774 (1983-04-01), Yoder
patent: 4611388 (1986-09-01), Pande
Asbeck et al, 8179 IEEE Electron Device Letters, vol. EDL-4, (1983), No. 4.

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