Vertical MOSFET having Schottky diode for latch-up prevention

Details Vertical MOSFET having Schottky diode for latch-up prevention Vertical MOSFET having Schottky diode for latch-up prevention

1987-06-10

1989-04-18

James, Andrew J.

357 42, 357 41, 357 86, 357 234, H01L 2948

Patent

active

048231720

ABSTRACT:
In a vertical MOSFET of a conductivity modulated type or a standard type, including an n epitaxial layer grown on a p.sup.+ or n.sup.+ substrate, a p type channel region, and an n.sup.+ source region, there is further provided a Schottky diode which is formed between the n epitaxial layer and a metal source electrode extending through the source region and channel region and reaching the epitaxial layer under the source and channel regions in order to prevent latch-up of a parasitic thyristor.

REFERENCES:
patent: 4156246 (1979-05-01), Pedersen
patent: 4300152 (1981-11-01), Lepseuter
patent: 4466176 (1984-08-01), Temple
patent: 4513309 (1985-04-01), Cricchi
patent: 4686551 (1987-08-01), Mihara
patent: 4889647 (1987-08-01), Nakagawa et al.
Goodman et al., "Improved COMFETs with Fast Switching Speed and High-Current Capability", IEEE, IEDM83, pp. 79-82, 1983.
Ohashi et al., "Basic Characteristics of Bipolar-Mode MOSFET", SSD85-22, pp. 1-7, 1985.

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