Method for producing high yield electrical contacts to N+ amorph

Details Method for producing high yield electrical contacts to N+ amorph Method for producing high yield electrical contacts to N+ amorph

1987-04-20

1988-09-27

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437187, 437228, 437245, 20419215, 156662, 156664, H01L 2144

Patent

active

047742070

ABSTRACT:
Electrical contact to doped amorphous silicon material is enhanced by depositing a thin layer of molybdenum on the amorphous silicon surface and subsequently removing it. This treatment is found to permanently alter the silicon surface so as to facilitate and improve electrical contact to the silicon material by subsequently deposited metallization layers for source and drain electrode attachment. The layer of molybdenum which is deposited and removed need only be approximately 50 nanometers in thickness to produce desirable results. The method is particularly useful in the fabrication of thin film, inverted, amorphous silicon field effect transistors. Furthermore, such devices are particularly useful in the fabrication of liquid crystal display systems employing such field effect transistors in matrix addressed arrays used for switching individually selected pixel elements.

REFERENCES:
Lakatos, A. I., "Promise and Challenge of Thin-Film Silicon Approaches to Active Matrices", 1982 International Display Research Conference, IEEE, pp. 146-151.
Suzuki, K. et al., "High Resolution Transparent-Type a-Si TFT LCDs", SID Digest, (1983), pp. 146-147.
Snell, A. J., "Application of Amorphous Silicon Field Effect Transistors in Addressable Liquid Crystal Display Panels" Applied Physics, vol. 24, pp. 357-362 (1981).
Sugata, M. et al., "A TFT-Addressed Liquid Crystal Color Display", Proceedings of the Third International Display Research Conference, Paper No. 53, (Oct. 1983).
Stroomer, M. V. C., "Amorphous-Silicon TFT Array for LCD Addressing", Electronics Letters, vol. 18, No. 20 (1982).

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