Method for making static random-access memory device

Details Method for making static random-access memory device Method for making static random-access memory device

1986-08-22

1988-09-27

Ozaki, George T.

Fishing, trapping, and vermin destroying

357 59, 437 49, 437 60, 437157, H01L 21425, H01L 2138

Patent

active

047742038

ABSTRACT:
A method of making a static random-access memory device or SRAM including a memory cell having a high-resistance load element. The load element is formed from a polysilicon film, and an impurity is introduced into at least a part of the polysilicon film for the purpose of increasing the threshold voltage of a parasitic MISFET formed using the load element as its channel region. Alternatively, the deposition of the polysilicon film is carried out at a relatively high temperature, thereby preventing any increase in the current flowing through the load element, and thus reducing the power dissipation in the SRAM.

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