Method of bonding semiconductor wafers

Details Method of bonding semiconductor wafers Method of bonding semiconductor wafers

1987-08-25

1988-09-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437247, 148DIG3, 148DIG135, 148DIG150, 148DIG45, H01L 21265, H01L 21324

Patent

active

047741961

ABSTRACT:
A method of fusing two or more semiconductor wafers involves growing a silicon dioxide planar layer on each of two polished silicon wafer substrates, implanting positive ions in the silicon dioxide layers on one wafer and negative ions in the silicon dioxide layer on the other wafer. The source of positive ions is preferably cesium and the source of negative ions is preferably boron. The implanted grown oxide layers are brought into abutment so electrostatic attraction forces of the oppositely charged ions keep the wafers together while they are exposed to a relatively high temperature in an oxygen ambient to fuse the abutting surfaces together.

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