Fishing – trapping – and vermin destroying
Patent
1988-05-09
1989-04-18
Hearn, Brian E.
Fishing, trapping, and vermin destroying
437201, 437190, 437195, 437246, 437228, 437238, 437200, 357 71, 148DIG20, 148DIG106, 148DIG51, H01L 21283, H01L 21316
Patent
active
048227536
ABSTRACT:
A method is disclosed for fabricating a semiconductor device and especially for contacting a semiconductor device. A silicon substrate is provided which has a device region formed at the surface thereof and which is contacted with a silicide. An insulating layer overlies the substrate and has an opening therethrough which exposes a portion of that device region. Titanium nitride is deposited in a blanket layer overlying the silicide and the insulating layer. A leveling agent such as a spin-on glass is applied to the structure to substantially fill the opening. That leveling agent is then anisotropically etched to leave the leveling agent only in the opening. The leveling agent is used as an etch mask to remove the portion of titanium nitride which is located outside the opening. After removing the remaining leveling agent, the titanium nitride in the opening is used as a nucleating surface for the selective deposition of a tungsten plug which fills the contact opening. The titanium nitride layer serves as both a nucleating surface and as a barrier layer which separates the tungsten from the underlying silicon.
REFERENCES:
patent: 4141022 (1979-02-01), Sigg et al.
patent: 4505030 (1985-03-01), Jeuch
patent: 4518629 (1985-05-01), Jeuch
patent: 4541892 (1985-09-01), Jeuch
patent: 4552783 (1985-11-01), Stoll et al.
patent: 4617193 (1986-10-01), Wu
patent: 4624864 (1986-11-01), Hartman
patent: 4666737 (1987-05-01), Gimpelson et al.
P. J. Rosser and G. J. Tomkins, Mat. Res. Soc. Symp. Proc., vol. 37, 1985, Materials Research Society, pp. 607-612.
Murarka, S. P., J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-791.
Smith et al., V-MIC Conference, Jun. 9-10, 1986, pp. 403-410.
Pintchovski Faivel
Tobin Philip J.
Fisher John A.
Hearn Brian E.
Motorola Inc.
Quach T. N.
LandOfFree
Method for making a w/tin contact does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for making a w/tin contact, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for making a w/tin contact will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2396856