Method of producing a thin film semiconductor device

Fishing – trapping – and vermin destroying

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437 40, 437907, 437908, 437935, 148DIG91, 148DIG93, 357 237, 427 531, H01L 21268

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048227510

ABSTRACT:
A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.

REFERENCES:
patent: 4624737 (1986-11-01), Shimbo
Bauerle, "Production of Microstructures by Laser Pyrolysis", Mat. Res. Soc. Symp. Proc., vol. 17, Elsevier Science Publishing Co., Inc., 1983, pp. 19-28.
Sze, Physics of Semiconductor Devices, John Wiley and Sons, 1969, pp. 568-586.
Bauerle et al., "Laser Induced Chemical Vapor Decomposition of C and Si", Appl. Phys. B, vol. 28, pp. 267-268.
V. Baranauskas et al., "Laser-Induced Chemical Vapor Deposition of Polycrystalline Si from SiCl.sub.4 ", Applied Physics Letter, 36(11), Jun. 1, 1980.
D. Bauerle et al., "Ar.sup.+ Laser Induced Chemical Vapor Deposition of Si from SiH.sub.4 ", Applied Physics Letter, 40(9), May 1, 1982.
Ishizu et al., "Direct Pattern Writing of Silicon by Argon Laser Induced CVD", Proceedings of Symposium on Dry Process (Oct. 24-25, 1985), Tokyo, pp. 13-18.

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