Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

1991-11-19

1993-01-05

Davie, James W.

Coherent light generators

Particular beam control device

Tuning

372 92, 372 99, 372108, H01S 310

Patent

active

051777495

ABSTRACT:
A semiconductor laser device includes a semiconductor laser element having a quantum well structure active layer having n levels of quantum states (n.gtoreq.2) from the first quantum level to the n-th quantum level in which the front facet reflectivity and the rear facet reflectivity are asymmetrical so that oscillation can occur at the n-th quantum level, a reflecting mirror having a reflectivity that causes oscillation of the semiconductor element to occur at a quantum level lower than the n-th quantum level, and a reflecting mirror moving unit for positioning the reflecting mirror in the neighborhood of the front facet or the rear facet of the semiconductor laser element. Therefore, a semiconductor laser device which can oscillate at two or more wavelengths with a simple construction is obtained.

REFERENCES:
patent: 5056098 (1991-06-01), Anthony et al.
Tokuda et al, "Widely Separated . . . Injection Current Control", Applied Physics Letters 49 (24), 1986, pp. 1629-1631.

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