Method of making an insulated gate bipolar transistor with high-

Details Method of making an insulated gate bipolar transistor with high- Method of making an insulated gate bipolar transistor with high-

1995-09-11

1998-12-01

Niebling, John

Fishing, trapping, and vermin destroying

437 31, 437 41, 437203, H01L 21265, H01L 4500, H01L 2144, H01L 2148

Patent

active

058437967

ABSTRACT:
An improved insulated gate bipolar transistor (IGBT) device structure and a method for fabricating such a device. This structure uses self-aligned and substantially undiffused successive N+ and P+ implants. The P+ implant is at high energy, which forms a subsurface P+ region below the entire bottom of an N+ "source" region of the IGBT. This low resistivity region suppresses thyristor latch-up when contacted via a surface trench. Self-aligned techniques provide method and product improvements.

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The Vertical IGBT With An Implanted Buried Layer--By S. Eranen & M. Blombert. Proceeding from 3rd Intl. Symp. on Power Semiconductor Devices & ICs. pp. 211-214.

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