Method of manufacturing an integrated circuit chip and integrate

Details Method of manufacturing an integrated circuit chip and integrate Method of manufacturing an integrated circuit chip and integrate

1985-05-28

1987-05-05

Terapane, John F.

357 54, 29591, H01L 2348, H01L 2158

Patent

active

H00002747

ABSTRACT:
A method of manufacturing an integrated circuit chip utilizing a two-step process for converting an ordinary photoresist material to a useful dielectric. This is done by exposing the photoresist to an xenon flash lamp and then baking it at a high temperature. The converted photoresist is used as a permanent dielectric layer in the integrated chip.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano et al.
patent: 4040083 (1977-08-01), Saiki et al.
patent: 4328262 (1982-05-01), Kurahashi
Allen et al, "Deep U.V. Hardening of Positive Photoresist Patterns", Journal of the Electrochemical Society, Jun. 1982, pp. 1379-1381.
Grobman, "Multilayer Packaging using Resist Layers", I.B.M. Tech. Discl. Bulletin, 23(10), 3/81.

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