Semiconductor laser of patterned-substrate type and structure th

Details Semiconductor laser of patterned-substrate type and structure th Semiconductor laser of patterned-substrate type and structure th

1994-04-11

1994-12-20

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 45, H01S 319

Patent

active

053751361

ABSTRACT:
A semiconductor laser of a patterned-substrate type comprises the patterned-substrate having a sloped portion and a planar portion, and a plurality of semiconductor layers formed on the patterned-substrate including a heterostructure. By controlling condition for growing a specific semiconductor layer, a preferably ratio of a sloped portion thickness to a planar portion thickness of the semiconductor layer can be obtained, which enables a lasing current of the laser to be confined in a restricted region, and this results in obtaining a high efficiency and a high power output of the semiconductor laser.

REFERENCES:
patent: 5255281 (1993-10-01), Sugano et al.
Guotong Du, Xiabo Zhang, Fanghai Zhao and Dingsan Gao, IEEE Journal of Quantum Electronics, "Terraced Substrate Inner Stripe Visible Semiconductor Laser and Its Arrays", vol. 26, No. 3, Mar. 1990.
Jun-ichi Hashimoto, Tsukuru Katsuyama, Jiro Shinkai, Ichiro Yoshida and Hideki Hayashi, Applied Physics Letters, "Effects of Strained-Layer Structures on the Threshold Current Density of AlFalnP/FalnP Visible Lasers", 58(9), 4 Mar. 1991.
A. Furuya, M. Kondo, M. Sugano, T. Anayama, K. Domen, T. Tanahashi and T. Mikawa, Electronics Letters, "Small Beam Astigmatism of AlGalnP Visible Laser Diode Using Selfaligned Bend Waveguide", vol. 28, No. 12, 4 Jun. 1992.

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