Semiconductor light emitting device

Details Semiconductor light emitting device Semiconductor light emitting device

1994-04-25

1994-12-20

Epps, Georgia Y.

Coherent light generators

Particular active media

Semiconductor

372 46, 257 13, H01S 319

Patent

active

053751345

ABSTRACT:
A semiconductor laser has a first cladding layer of a first conductivity type, an active layer, and a second cladding layer of a second conductivity type, which are successively deposited on a semiconductor substrate by epitaxial growth. The first cladding layer and/or the second cladding layer is made of a compound semiconductor material of a zincblende crystal structure containing Mg.

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Journal of Crystal Growth 117, 1992 (There is no month, just a year-Journal), Hiroyuki Okuyama et al, "Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy", pp. 139-143.
Journal of Crystal Growth 131, 1993, (There is no month, just a year-Journal) A. Waag et al, "Growth of MgTe and Cd.sub.1-x Mg.sub.x Te Thin Films by Molecular Beam Epitaxy", pp. 607-611 (There is no month; just a year-Journal).
Electronics Letters, Sep. 10, 1992, vol. 28, No. 19, "ZnSe/ZnMgSSe Blue Laser Diode", H. Okuyama et al; pp. 1798-1799.
Japanese Journal of Applied Physics, vol. 30, No. 8, Aug., 1991, pp. 1668-1669; "On the Properties of ZnSe/(NH.sub.4).sub.2 S.sub.x -Pretreated GaAs Heterointerfaces", Takahiro Ohnakado et al.
Japanese Journal of Applied Physics, vol. 30, No. 9B, Sep., 1991, pp. L 1620-L 1623; "Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy", Hiroyuki Okuyama et al.

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