Semiconductor memory which is protected from erasure by light sh

Details Semiconductor memory which is protected from erasure by light sh Semiconductor memory which is protected from erasure by light sh

1990-07-17

1991-11-26

Hille, Rolf

357 54, 357 84, H01L 2968, H01L 2934, H01L 2504

Patent

active

050686976

ABSTRACT:
A nonvolatile semiconductor memory device having memory cells in which a control gate is stacked on a floating gate through an insulating film. The memory device has redundant memory cells so as to compensate defective memory cells and a transistor to select the redundant memory cells and the redundant memory cells and the transistor to select the redundant memory cells are formed by a nonvolatile memory transistor. The transistor to select the redundant memory cells has a structure in which the upper surface and side walls of the floating gate are covered by a control gate or a structure in which the floating gate and control gate are covered by a light shielding film and an antireflection film formed under the light shielding film.
In a nonvolatile semiconductor memory device having memory cells of a structure in which a control gate is stacked on a floating gate through an insulating film, a phosphosilicate glass film is formed on side walls of the floating gate and the control gate and a silicon nitride film and an arseno-silicate glass film or boro-phospho-silicide glass film are sequentially formed so as to cover the control gate.

REFERENCES:
patent: 3967310 (1976-06-01), Horiuchi et al.
patent: 4758869 (1988-07-01), Eitan et al.
patent: 4847667 (1989-07-01), Mori

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