Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1990-05-14
1991-11-26
Berman, Jack I.
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
250398, H01J 37317
Patent
active
050685392
ABSTRACT:
An ion implantation apparatus comprises a pair of scanning electrodes for statically scanning an ion beam in an X direction; a drive unit for mechanically scanning a target in a Y direction substantially perpendicular to the X direction; a scanning power supply including a signal generator for generating a signal with a waveform corresponding to waveform data which is input from an outside and an amplifier for amplifying the signal and for outputting it to the pair of scanning electrodes; a multiple point monitor containing a large number of Faraday cups with same area disposed in the X direction for receiving the ion beam and for measuring the beam current; a monitor drive unit for moving the multiple point monitor to and from a radiation area of the scanned ion beam; and a control unit for obtaining the distribution of the beam current sum being entered into each Faraday cup according to the beam current measured by each Faraday cup of the multiple point monitor, for generating the waveform data so that the distribution of the beam current sum becomes flat, and for inputting the resultant data to the signal generator of the scanning power supply.
REFERENCES:
patent: 4494005 (1985-01-01), Shibata et al.
patent: 4922106 (1990-05-01), Berrian et al.
patent: 4983850 (1991-01-01), Tsukakoshi et al.
Nishikawa Kazuhiro
Nogami Mamoru
Berman Jack I.
Nissin Electric Company, Limited
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