Silicon on insulator master slice semiconductor integrated circu

Details Silicon on insulator master slice semiconductor integrated circu Silicon on insulator master slice semiconductor integrated circu

1997-05-29

1999-12-28

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

Having specific type of active device

257350, H01L 27105

Patent

active

06008510&

ABSTRACT:
A master slice semiconductor IC has a SOI substrate and a plurality of basic cells arranged in a matrix on the SOI substrate. The basic cell includes a two-input NAND gate and a diode forward biased between one of power supply lines and the NAND gate. The diode has a P-N junction extending between the top surface of a semiconductor layer and the insulator layer underlying the semiconductor layer. The diode reduces the supply voltage by the forward drop voltage thereof to reduce power consumption in the NAND gate, and the SOI structure of the basic cell prevents reduction of integration density and operational speed.

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