Method of manufacturing a semiconductor device by non-selectivel

Details Method of manufacturing a semiconductor device by non-selectivel Method of manufacturing a semiconductor device by non-selectivel

1977-02-01

1978-09-12

Dean, R.

Metal treatment

Compositions

Heat treating

148175, 357 50, 357 91, H01L 21265

Patent

active

041135130

ABSTRACT:
A method of manufacturing a semiconductor device is disclosed in which an unwanted inversion layer between two otherwise isolated regions is eliminated. The inversion layer is eliminated by ion implanting a semiconductor layer of higher doping concentration than that of the substrate over the entire substrate surface. A semiconductor device manufactured by the method is also disclosed.

REFERENCES:
patent: 3386865 (1968-06-01), Doo
patent: 3748187 (1973-01-01), Aubuchon et al.
patent: 3891469 (1975-06-01), Moriyama
patent: 4011105 (1977-03-01), Paivinen
patent: 4011581 (1977-03-01), Kubo et al.
patent: 4023195 (1977-05-01), Richman

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