Single crystal pulling apparatus

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth

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Details

117 13, 117208, 117214, C30B 1520

Patent

active

053738055

ABSTRACT:
A single crystal pulling apparatus based on Czochralski technique having a conduit for continuously supplying granular polycrystal material to the crucible and a vertical purge tube suspended centrally into the heating chamber, wherein the purge tube is vertically shiftable; a heat shield ring is connected to the lower end of the purge tube, and a cylindrical quartz partition ring made of a quartz glass containing no bubbles is held vertically by the heat shield ring in a manner such that the lower end of the quartz partition ring comes substantially lower than the lower end of the purge tube so that, by being dipped in the polycrystal melt, the partition ring isolates the interior surface of the melt from the exterior surface of the melt, over which latter the granular polycrystal material is poured.

REFERENCES:
patent: 4330361 (1982-05-01), Kahn-Kuhnenfeld et al.
patent: 4330362 (1982-05-01), Zulehner
patent: 4956153 (1990-09-01), Yamagishi et al.
patent: 4957713 (1990-09-01), Kravetsky et al.
patent: 4981549 (1991-07-01), Yamashita et al.
patent: 5129986 (1992-07-01), Seki et al.
patent: 5196173 (1993-03-01), Arai et al.

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