Method for producing a light emitting diode having transparent s

Details Method for producing a light emitting diode having transparent s Method for producing a light emitting diode having transparent s

1994-02-10

1995-04-04

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437 5, 437 23, 437 62, 437129, 257 72, H01L 21203

Patent

active

054039169

ABSTRACT:
A method for producing a light emitting diode includes the steps of: forming a first semiconductor multilayer on a first semiconductor substrate having a first conductivity type; forming a light emitting layer on the first semiconductor multilayer; forming a second semiconductor multilayer; disposing a second substrate which is transparent to light emitted from the light emitting layer on the second semiconductor multilayer; and bonding the second substrate and the second semiconductor multilayer through direct bonding with heating a vicinity of an interface between the second substrate and the second semiconductor multilayer.

REFERENCES:
patent: 5189500 (1993-02-01), Kusumoki
Wada et al., "Electrical characteristics of low temperature directly bonded GaAs/InP heterojunctions" Gallium Arsenide and Related Compounds 1992, Proceedings of the Ninteenth International Symposium on Gallium Arsenide and Related Compounds, Karuizawa, Japan, Sep. 28, 1992-Oct. 2, 1992, Ikegami et al., eds., Institute of Physics Conference Series No. 129, Institute of Physics Publishing, pp. 947-948.
Lo et al., "Bonding by atomic rearrangement of InP/InGaAsP 1.5 .mu.m wavelength leasers on GaAs substrates" Appl. Phys. Lett. (1991) 58(18):1961-1963.
Dudley et al., "144.degree. C. operation of 1.3 .mu.m InGaAsP vertical cavity lasers on GaAs substrates" Appl. Phys. Lett. (1992) 61(26):3095-3097.

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