Electroluminescent semiconductor device having chalcogenide laye

Details Electroluminescent semiconductor device having chalcogenide laye Electroluminescent semiconductor device having chalcogenide laye

1993-03-12

1994-06-28

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

257 94, 257103, 257614, H01L 29161, H01L 3300

Patent

active

053249631

ABSTRACT:
A light-emitting diode has a GaAs substrate, and two ZnSe layers formed on the substrate and having a pn junction. An AuZn electrode is formed on the upper one of the ZnSe layers with a (ZnSe).sub.x (GaAs).sub.(1-x) ohmic contact layer interposed therebetween. The coefficient x of the composition formula is substantially continuously varied from 1.0 to 0 from the ZnSe layer side. An AuGe electrode is formed on the lower surface of the GaAs substrate. The (ZnSe).sub.x (GaAs).sub.(1-x) layer reduces the resistance between the ZnSe layer and AuZn electrode, and also prevents Ga atoms from diffusing into the ZnSe layer.

REFERENCES:
patent: 4315796 (1982-02-01), Nishizawa
patent: 4868615 (1989-09-01), Kamata
patent: 4992837 (1991-02-01), Sakai et al.
patent: 5091758 (1992-02-01), Morita
patent: 5237182 (1993-08-01), Kitagawa et al.
Japanese Journal of Applied Physics vol. 29, No. 2, Feb., 1990 pp. L236-239, N. Kobayashi, et al. "Growth of ZnSe/GaAs Superlatives . . . ".

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