Semiconductor optical device having a heterointerface therein

Details Semiconductor optical device having a heterointerface therein Semiconductor optical device having a heterointerface therein

1992-05-14

1994-06-28

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 22, 257186, H01L 29205, H01L 3106

Patent

active

053249593

ABSTRACT:
A semiconductor device includes a region in which carriers are transferred in the lamination direction of a multiple quantum well, such as a multiple quantum well multiplication layer of a superlattice APD. A superlattice structure with a varying well width is introduced to a hetero-interface present in the transfer region, thereby preventing pile-up of the carriers.

REFERENCES:
patent: 4181901 (1980-01-01), Heyke
patent: 5061970 (1991-10-01), Goronkin
Appl. Phys Lett. 54(1) 2 Jan. 1989 Wada et al "Very High Speed GaInAs . . . Superlattice".
Capasso et al App Phys. Lett. 45(11) 1 Dec. 84 pp. 1193-1195 "Pseudo-quaternary . . . Photodiodes".

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